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IPT020N10N3 - MOSFET

Datasheet Summary

Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Extremely low on-resistance RDS(on).
  • High current capability.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC 1) for target.

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Datasheet preview – IPT020N10N3

Datasheet Details

Part number IPT020N10N3
Manufacturer Infineon
File Size 1.06 MB
Description MOSFET
Datasheet download datasheet IPT020N10N3 Datasheet
Additional preview pages of the IPT020N10N3 datasheet.

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM3Power-Transistor,100V IPT020N10N3 DataSheet Rev.2.
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