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IPS70R1K4P7S - MOSFET

Description

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Features

  • Extremely low losses due to very low FOM RDS(on).
  • Qg and RDS(on).
  • Eoss.
  • Excellent thermal behavior.
  • Integrated ESD protection diode.
  • Low switching losses (Eoss).
  • Product validation acc. JEDEC Standard Benefits.
  • Cost competitive technology.
  • Lower temperature.
  • High ESD ruggedness.
  • Enables efficiency gains at higher switching frequencies.
  • Enables high power density designs and small form factors Potenti.

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Datasheet preview – IPS70R1K4P7S

Datasheet Details

Part number IPS70R1K4P7S
Manufacturer Infineon
File Size 927.33 KB
Description MOSFET
Datasheet download datasheet IPS70R1K4P7S Datasheet
Additional preview pages of the IPS70R1K4P7S datasheet.

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Full PDF Text Transcription

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IPS70R1K4P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.
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