Datasheet4U Logo Datasheet4U.com

IPP320N20N3 - Power-Transistor

Download the IPP320N20N3 datasheet PDF. This datasheet also covers the IPP320N20N3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID 200 V 32 mΩ 34 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPP320N20N3G-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPP320N20N3 N-Channel MOSFET INCHANGE
IPP35CN10N N-Channel MOSFET INCHANGE
IPP015N04N N-Channel MOSFET INCHANGE
IPP020N06N N-Channel MOSFET INCHANGE
IPP023N04N N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPP320N20N3G Power-Transistor
IPP339N20NM6 200V Power-Transistor
IPP35CN10N Power-Transistor
IPP35CN10NG Power-Transistor
IPP011N03LF2S MOSFET

Full PDF Text Transcription

Click to expand full text
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID 200 V 32 mΩ 34 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G Package Marking PG-TO263-3 320N20N PG-TO220-3 320N20N PG-TO262-3 320N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode
Published: |