IPP200N25N3
Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Part: IPP200N25N3
- Description: Power-Transistor
- Category: Transistor
- Manufacturer: Infineon
- Size: 697.76 KB