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IPP12CN10NG - Power-Transistor

Download the IPP12CN10NG datasheet PDF. This datasheet also covers the IPP12CN10N variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.4 mW 67 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPP12CN10N-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IPP12CN10N N-Channel MOSFET INCHANGE
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IPP120N06NG Power-Transistor Infineon Technologies
IPP120N20NFD N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPP12CN10N Power-Transistor
IPP12CN10L Power-Transistor
IPP12CN10LG Power-Transistor
IPP120N04S3-02 Power-Transistor
IPP120N04S4-01 Power-Transistor

Full PDF Text Transcription

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IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.
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