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IPP05CN10NG - Power-Transistor

Download the IPP05CN10NG datasheet PDF. This datasheet also covers the IPP05CN10N variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.1 mΩ 100 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPP05CN10N-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IPP05CN10N N-Channel MOSFET INCHANGE
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Other Datasheets by Infineon

Part Number Description
IPP05CN10N Power-Transistor
IPP050N03LF2S MOSFET
IPP050N06N Power-Transistor
IPP051N15N5 MOSFET
IPP052N06L3 Power-Transistor

Full PDF Text Transcription

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IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.
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