IPLK70R1K4P7 - 700V MOSFET

Description

Features

Extremely low losses due to very low FOM RDS(on).
Qg and RDS(on).
Eoss.
Excellent thermal behavior.
Integrated ESD protection diode.
Low switching losses (Eoss).
Fully qualified acc. JEDEC for Industrial.

Infineon

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Datasheet Details

Part number	IPLK70R1K4P7
Manufacturer	Infineon
File Size	1.76 MB
Description	700V MOSFET
Datasheet	IPLK70R1K4P7 Datasheet
Additional preview pages of the IPLK70R1K4P7 datasheet.

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Full PDF Text Transcription

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IPLK70R1K4P7 MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.

Published: May 17, 2025 |