IPL65R195C7 - 650V MOSFET

Description

Features

Increased MOSFET dv/dt ruggedness.
Better efficiency due to best in class FOM RDS(on).
Eoss and RDS(on).
Qg.
ThinPAK SMD Package with very low parasitic inductance to enable fast and reliable switching with minimum of size to increase power-density.
Easy to use/drive due to driver source pin for better control of the gate.
Pb-free plating, halogen free mold compound.
Qualified for industrial grade.

Infineon

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Datasheet Details

Part number	IPL65R195C7
Manufacturer	Infineon
File Size	1.37 MB
Description	650V MOSFET
Datasheet	IPL65R195C7 Datasheet
Additional preview pages of the IPL65R195C7 datasheet.

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Full PDF Text Transcription

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IPL65R195C7 MOSFET 650VCoolMOSªC7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability.

Published: Feb 12, 2016 |