IPI041N12N3 - Power Transistor

This page provides the datasheet information for the IPI041N12N3, a member of the IPI041N12N3G Power Transistor family.

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant, halogen free.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPI041N12N3
Manufacturer	Infineon
File Size	873.00 KB
Description	Power Transistor
Datasheet	IPI041N12N3 Datasheet
Additional preview pages of the IPI041N12N3 datasheet.

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Full PDF Text Transcription

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IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification IPI041N12N3 G IPB038N12N3 G 120 V 3.

Published: Oct 2, 2020 |