Datasheet4U Logo Datasheet4U.com

IPD800N06NG - Power-Transistor

Features

  • For fast switching converters and sync. rectification.
  • N-channel enhancement - normal level.
  • 175 °C operating temperature.
  • Avalanche rated.
  • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 80 16 V mΩ A Type IPD800N06N G Package Marking PG-TO252-3 800N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPD800N06N G OptiMOS® Power-Transistor Features • For fast switching converters and sync.
Published: |