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IPC300N15N3R - MOSFET

Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPP075N15N3 G1) AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or

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MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC300N15N3R DataSheet Rev.2.6 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC300N15N3R 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP075N15N3G1) •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 150 7.
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