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IPC045N10N3 - MOSFET

Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPP180N10N3 G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to JEDEC Die bond: soldered or glued

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC045N10N3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC045N10N3 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP180N10N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoJEDEC •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 100 18.01) 2.5 x 1.
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