Datasheet4U Logo Datasheet4U.com

IPBE65R115CFD7A - 650V MOSFET

Description

.

.

.

.

Features

  • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr.
  • Lowest FOM RDS(on).
  • Qg and RDS(on).
  • Eoss.
  • 100% avalanche tested.
  • Kelvin source contact available.
  • Best-in-class RDS(on) in SMD and THD packages Benefits.
  • Optimized for higher battery voltages up to 475 V thanks to further improved robustness.
  • Lower switching losses enabling higher switching frequencies.
  • H.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPB009N03LG MOSFET Infineon Technologies
IPB011N04LG Power Transistor Infineon Technologies
IPB011N04NG OptiMOS3 Power Transistor Infineon Technologies
IPB014N06N Power Transistor Infineon Technologies
IPB015N04L N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPBE65R190CFD7A 650V MOSFET
IPBE65R050CFD7A 650V MOSFET
IPBE65R075CFD7A 650V MOSFET
IPBE65R099CFD7A 650V MOSFET
IPBE65R230CFD7A 650V MOSFET

Full PDF Text Transcription

Click to expand full text
IPBE65R115CFD7A MOSFET 650VCoolMOSªCFD7ASJPowerDevice 650VCoolMOS™CFD7AisInfineon'slatestgenerationofmarketleading automotivequalifiedhighvoltageCoolMOS™MOSFETs.Inadditiontothe well-knownattributesofhighqualityandreliabilityrequiredbythe automotiveindustry,thenewCoolMOS™CFD7Aseriesprovidesforan integratedfastbodydiodeandcanbeusedforPFCandresonant switchingtopologiesliketheZVSphase-shiftfull-bridgeandLLC.
Published: |