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IPB65R110CFD7 - 650V MOSFET

Description

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Features

  • Ultra-fast body diode.
  • 650V break down voltage.
  • Best-in-class RDS(on).
  • Reduced switching losses.
  • Low RDS(on) dependency over temperature Benefits.
  • Excellent hard commutation ruggedness.
  • Extra safety margin for designs with increased bus voltage.
  • Enabling increased power density solutions.
  • Outstanding light load efficiency in industrial SMPS.

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Full PDF Text Transcription

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IPB65R110CFD7 MOSFET 650VCoolMOSªCFD7SJPowerDevice Thelatest650VCoolMOS™CFD7extendsthevoltageclassofferingof theCFD7familyandisasuccessortothe650VCoolMOS™CFD2. Resultingfromimprovedswitchingperformanceandexcellentthermal behavior,650VCooMOS™CFD7offershighestefficiencyinresonant switchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).As partofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblends alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard commutationrobustness.TheCoolMOS™CFD7technologymeets highestefficiencyandreliabilitystandardsandfurthermoresupportshigh powerdensitysolutions.
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