IPAN60R800CE
Features
- Extremelylowlossesduetoverylow FOMRdson- Qgand Eoss
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
- Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitching PWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:For MOSFETparallelingtheuseofferritebeadson thegateorseparatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
800 mΩ
Id.
Qg.typ
17.2 n C
ID,pulse
Eoss@400V
µJ
Type/Ordering Code IPAN60R800CE
Package PG-TO 220 Full PAK Narrow Lead
Marking 60S800CE
PG-TO220FP
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Related Links see Appendix A
Final Data Sheet Final Data Sheet
Rev.2.1,2016-11-28
Rev.2.2, 2018-04-25
600VCool MOS™CEPower...
