IPAN60R650CE
Features
- Extremelylowlossesduetoverylow FOMRdson- Qgand Eoss
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
- Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitching PWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
650 mΩ
Id. 9.9 A
Qg.typ
20.5 n C
ID,pulse
Eoss@400V
µJ
Type/Ordering Code IPAN60R650CE
Package PG-TO 220 Full PAK Narrow Lead
Marking 60S650CE
PG-TO220FP
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Related Links see Appendix A
Final Data Sheet Final Data Sheet
1 Rev.2.1,2016-11-28 1 Rev. 2.2, 2018-04-25
600VCool MOS™CEPower Transistor
Tableof Contents
Description
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