IPAN60R280PFD7S
Features
- Extremelylowlossesduetoverylow FOMRDS(on)- Qgand RDS(on)- Eoss
- Lowswitchinglosses Eoss,excellentthermalbehavior
- Fastbodydiode
- Widerangeportfolioof RDS(on)andpackagevariations
- Integratedzenerdiode
Benefits
- Enableshighpowerdensitydesignsandsmallformfactors
- Enablesefficiencygainsathigherswitchingfrequencies
- Excellentmutationruggedness
- Easytoselectrightpartsandoptimizethedesign
- High ESDruggedness
Potentialapplications
Remendedfor ZVStopologiesusedinhighdensitychargers, adapters,lightingandmotordrivesapplications,etc.
Productvalidation
Qualifiedaccordingto JEDECStandard
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
280 mΩ
Qg,typ
15.3 n C
ID,pulse
Eoss @ 400V
µJ
Body diode di F/dt
A/µs
ESD Class (HBM)...
