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IPAN60R280PFD7S - 600V MOSFET

Description

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Features

  • Extremely low losses due to very low FOM RDS(on).
  • Qg and RDS(on).
  • Eoss.
  • Low switching losses Eoss, excellent thermal behavior.
  • Fast body diode.
  • Wide range portfolio of RDS(on) and package variations.
  • Integrated zener diode Benefits.
  • Enables high power density designs and small form factors.
  • Enables efficiency gains at higher switching frequencies.
  • Excellent commutation ruggedness.
  • Easy to select right parts a.

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Full PDF Text Transcription

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IPAN60R280PFD7S MOSFET 600VCoolMOSªPFD7SJPowerDevice CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™PFD7isanoptimizedplatformtailoredtotarget costsensitiveapplicationsinconsumermarketssuchascharger,adapter, motordrive,lighting,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.
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