Description
13-16 (5-8)
case 1(2) and drain D1(D2)
3,4 (11,12)
source S1(S2)
2(10)
kelvin sense K1(K2)
1(9)
gate G1(G2) Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction
2021-10-27
restr
Features
- VDSS = 1200 V at Tvj = 25°C.
- IDDC = 89 A at TC = 100°C.
- RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C.
- Internal layout optimized for fast switching.
- Very low switching losses.
- Overload operation up to Tvj = 200°C.
- Short circuit withstand time 2 µs.
- Benchmark gate threshold voltage, VGS(th) = 4.2 V.
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
- Robust body diode for hard commutatio.
IMSQ120R012M2HH Datasheet
