Click to expand full text
Public
IMBG40R025M2H Final datasheet
CoolSiC™
400V CoolSiC™ G2 MOSFET
Features
• Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection technology for best‑in‑class thermal performance • 100% avalanche tested
Potential applications
• SMPS • Solar PV inverters • Energy storage, UPS and battery formation • Class‑D audio • Motor drives
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Parameter VDS RDS(on),typ ID Qoss Eoss QG
Key Performance Parameters
Value
Unit
400
V
25.4
mΩ
68
A
59
nC
4.
IMBG40R025M2H Datasheet
