IKZA75N65EH7 - IGBT

Datasheet Summary

Description

Type IKZA75N65EH7 Package PG-TO247-4-STD-NT3.7 Marking K75EEH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-27 IKZA75N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Table

Features

VCE = 650 V.
IC = 75 A.
Low switching losses.
Very low collector-emitter saturation voltage VCEsat.
Very soft, fast recovery antiparallel diode.
Smooth switching behavior.
Humidity robustness.
Optimized for hard switching, two- and three-level topologies.
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ Potential.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IKZA75N65EH7
Manufacturer	Infineon
File Size	2.11 MB
Description	IGBT
Datasheet	IKZA75N65EH7 Datasheet
Additional preview pages of the IKZA75N65EH7 datasheet.

📁 Similar Datasheet

IKZ75N65EH5 - IGBT (Infineon Technologies)

Other Datasheets by Infineon

IKZA75N65RH5 - Hybrid Discrete IGBT
IKZA40N120CH7 - High speed 1200V IGBT
IKZA40N120CS7 - IGBT
IKZA50N65EH7 - IGBT
IKZA50N65RH5 - IGBT
IKZ50N65EH5 - IGBT
IKZ50N65ES5 - IGBT
IKZ50N65NH5 - IGBT

Full PDF Text Transcription

Click to expand full text

IKZA75N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode Features • VCE = 650 V • IC = 75 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete product spectrum and PSpice Models: http://www.infineon.

Published: Aug 19, 2023 |