IKW75N65EH5 - IGBT

Description

Features

C High speed H5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low gate charge QG.
IGBT copacked with full-rated RAPID 1 fast and soft antiparallel diode.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IKW75N65EH5
Manufacturer	Infineon
File Size	2.08 MB
Description	IGBT
Datasheet	IKW75N65EH5 Datasheet

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Full PDF Text Transcription

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IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-ratedRAPID1 fastandsoftantiparalleldiode IKW75N65EH5 650VDuoPackIGBTandfull-rateddiode Highspeedseriesfifthgeneration Datasheet IndustrialPowerControl IKW75N65EH5 Highspeedseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-rated RAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel diode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplicat

Published: Mar 3, 2016 |