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IKW40N65ES5 - IGBT

Description

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Features

  • C High speed S5 technology offering.
  • High speed smooth switching device for hard & soft switching.
  • Very Low VCEsat, 1.35V at nominal current.
  • Plug and play replacement of previous generation IGBTs.
  • 650V breakdown voltage.
  • Low gate charge QG.
  • IGBT copacked with full rated RAPID 1 fast antiparallel diode.
  • Maximum junction temperature 175°C.
  • Qualified according to JEDEC for target.

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Full PDF Text Transcription

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IGBT TRENCHSTOPTM5highSpeedsoftswitchingIGBTwithfullcurrentratedRAPID1diode IKW40N65ES5 650VTRENCHSTOPTM5highspeedsoftswitchingduopak Datasheet IndustrialPowerControl IKW40N65ES5 TRENCHSTOPTM5softswitchingIGBT TRENCHSTOPTM5highspeedsoftswitchingIGBTcopackedwithfullcurrent ratedRAPID1fastandsoftantiparalleldiode  FeaturesandBenefits: C HighspeedS5technologyoffering •Highspeedsmoothswitchingdeviceforhard&softswitching •VeryLowVCEsat,1.
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