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IKW40N120CH7 - High speed 1200V IGBT

Description

TO-247 3Pin 2021-10-27 restricted C Copyright © Infineon T Type IKW40N120CH7 G E Package PG-TO247-3-STD-NN2.5 Marking K40MCH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-11-25 IKW40N120CH7

Features

  • VCE = 1200 V.
  • IC = 40 A.
  • Maximum junction temperature Tvjmax = 175°C.
  • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode.
  • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C.
  • Optimized for high efficiency in high speed hard switching topologies (2-L inverter, 3-L NPC T-type, ).
  • Easy paralleling capability due to positive temperature coefficient in VCEsat.
  • Pb-free l.

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Full PDF Text Transcription

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IKW40N120CH7 High speed 1200 V TRENCHSTOP™ IGBT 7 Technology High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 40 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C • Optimized for high efficiency in high speed hard switching topologies (2-L inverter, 3-L NPC T-type, ...) • Easy paralleling capability due to positive temperature coefficient in VCEsat • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.
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