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IKP15N65H5 - IGBT

Features

  • C High speed H5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • Plug and play replacement of previous generation IGBTs.
  • 650V breakdown voltage.
  • Low QG.
  • IGBT copacked with RAPID 1 fast and soft antiparallel diode.
  • Maximum junction temperature 175°C.
  • Qualified according to JEDEC for target.

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Full PDF Text Transcription

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IGBT Highspeed5IGBTinTRENCHSTOPTMtechnologycopackedwithRAPID1 fastandsoftantiparalleldiode IKP15N65H5 650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IKP15N65H5 Highspeedswitchingseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTMtechnologycopackedwithRAPID1 fastandsoftantiparalleldiode  FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompli
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