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IKB20N65EH5 - IGBT

Description

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Features

  • C High speed H5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • 650V breakdown voltage.
  • Low QG.
  • IGBT copacked with full rated current RAPID 1 fast antiparallel diode.
  • Maximum junction temperature 175°C.
  • Pb-free lead plating; RoHS compliant.
  • Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ G E C Potential.

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Full PDF Text Transcription

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IKB20N65EH5 Highspeedswitchingseries5thgeneration TRENCHSTOPTM5highspeedswitchingIGBTcopackedwithfullrated currentRAPID1antiparalleldiode  FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQG •IGBTcopackedwithfullratedcurrentRAPID1fastantiparallel diode •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.
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