Datasheet4U Logo Datasheet4U.com

IJW120R070T1 - Silicon Carbide-Junction Field Effect Transistor

Description

CoolSiC™ is Infineon’s new family of active power switches based on silicon carbide.

Combining the excellent material properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher performance paired with very high ruggedness.

Features

  • Ultra fast switching.
  • Internal fast body diode.
  • Low intrinsic capacitance.
  • Low gate charge.
  • 175 °C maximum operating temperature Gate Drain Source Drain Pin 2 Gate Pin 1 Benefits.
  • Enabling higher system efficiency and/ or higher output power in same housing.
  • Enabling higher frequency / increased power density solutions.
  • Syste.

📥 Download Datasheet

Datasheet Details

Part number IJW120R070T1
Manufacturer Infineon
File Size 1.14 MB
Description Silicon Carbide-Junction Field Effect Transistor
Datasheet download datasheet IJW120R070T1 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Infineon

Part Number Description
IJW120R100T1 Silicon Carbide-Junction Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
SiC- JFET Silicon Carbide- Junction Field Effect Transistor CoolSiC™ 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Datasheet Rev. 2.0, <2013-09-11> Power Management & Multimarket 1200 V Silicon Carbide JFET Description CoolSiC™ is Infineon’s new family of active power switches based on silicon carbide. Combining the excellent material properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher performance paired with very high ruggedness. The extremely low switching and conduction losses make applications even more efficient, compact, lighter and cooler.
Published: |