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IGO60R042D1 - Power Transistor

Datasheet Summary

Features

  • Enhancement mode transistor.
  • Normally OFF switch.
  • Ultra fast switching.
  • No reverse-recovery charge.
  • Capable of reverse conduction.
  • Low gate charge, low output charge.
  • Superior commutation ruggedness.
  • Qualified for industrial.

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Datasheet preview – IGO60R042D1

Datasheet Details

Part number IGO60R042D1
Manufacturer Infineon
File Size 566.71 KB
Description Power Transistor
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Full PDF Text Transcription

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IGO60R042D1 IGO60R042D1 600V CoolGaN™ enhancement-mode Power Transistor Features • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density • Enables higher operating frequency • System cost reduction savings • Reduces EMI Applications Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).
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