IGLR70R200D2S - 700V Transistor

Datasheet Summary

Description

1 Maximum ratings 3 T

Features

narrow production tolerances and the highest product quality. Features.
Enhancement mode transistor.
Ultra‑fast switching.
No reverse‑recovery charge.
Capable of reverse conduction.
Low gate and output charge.
Superior commutation ruggedness.
2 kV HBM ESD standards Benefits.
Normally OFF transistor technology ensures safe operation.
Enables rapid and precise power delivery control.
Improves system efficienc.

Infineon

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Datasheet Details

Part number	IGLR70R200D2S
Manufacturer	Infineon
File Size	1.30 MB
Description	700V Transistor
Datasheet	IGLR70R200D2S Datasheet
Additional preview pages of the IGLR70R200D2S datasheet.

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Public IGLR70R200D2S Final datasheet CoolGaN™ G5 CoolGaN™ Transistor 700 V G5 Infineon’s CoolGaN™ is a highly efficient gallium nitride (GaN) transistor designed for power conversion at 700 V. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using 200 mm (8 inch) wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality.

Published: Apr 25, 2025 |