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IGI60L5050A1M - IPS / 600V GaN half-bridge

Datasheet Summary

Description

IGI60L5050A1M combines a half-bridge power stage consisting of two 500 mΩ (typ.

Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with integrated gate drivers in a small 6 x 8 mm TFLGA-27 package.

Features

  • Two 500 m GaN switches in half-bridge configuration with integrated high- and low-side gate drivers - Source / sink driving current +0.29 A / -0.7 A -.

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Datasheet Details

Part number IGI60L5050A1M
Manufacturer Infineon
File Size 842.31 KB
Description IPS / 600V GaN half-bridge
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CoolGaNTM Integrated Power Stage (IPS) IGI60L5050A1M 500 m / 600 V GaN half-bridge with level-shift gate drivers Features • Two 500 m GaN switches in half-bridge configuration with integrated high- and low-side gate drivers - Source / sink driving current +0.29 A / -0.7 A - Application-configurable turn-on and turn-off speed - Integrated ultra-fast low-resistance bootstrap diode • Fast input-to-output propagation (typ. 98 ns) with extremely small channel-tochannel mismatch • PWM input signal • Standard logic input levels compatible with digital controllers • Single gate driver supply voltage (typ. 12 V) with fast UVLO recovery • Low-side open source for current sensing with external shunt resistor • Thermally enhanced 6 x 8 mm TFLGA-27 package • Product is fully qualified acc.
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