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IGI60F1414A1L - IPS / 600V GaN half-bridge

Datasheet Summary

Description

IGI60F1414A1L combines a half-bridge power stage consisting of two 140 m (typ.

Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN-28 package.

Features

  • Two 140 m GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers - Source / sink driving current up to 1 / 2 A -.

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Datasheet Details

Part number IGI60F1414A1L
Manufacturer Infineon
File Size 1.58 MB
Description IPS / 600V GaN half-bridge
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CoolGaNTM Integrated Power Stage (IPS) IGI60F1414A1L 140 m / 600 V GaN half-bridge with fast accurate isolated gate drivers Features • Two 140 m GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers - Source / sink driving current up to 1 / 2 A - Application-configurable turn-on and turn-off speed • Fast input-to-output propagation (typ. 47 ns) with extremely small channel-tochannel mismatch • PWM input signal (switching frequency up to 3 MHz) • Standard logic input levels compatible with digital controllers • Wide supply range • Single gate driver supply voltage possible (typ.
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