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IGC80T75E12RD2CKA - EDT2 IGBT

Description

Recommended for power modules Product Validation

Technology qualified for automotive applications.

Ready for validation for automotive applications according to AEC Q100/101 or AQG324.

Features

  • 750V trench + field stop technology.
  • Low VCE(sat).
  • Low switching losses.
  • Short tail current.
  • Positive temperature coefficient.
  • Integrated gate resistor.
  • Easy paralleling.
  • Integrated current mirror (current sensor).
  • Integrated temperature sensor.
  • Solderable / sinterable front side pads C G TSA TSC CS E.

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Full PDF Text Transcription

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IGC80T75E12RD2CKA EDT2 IGBT for Automotive Applications IGBT Quality Requirement Category: Automotive Features • 750V trench + field stop technology • Low VCE(sat) • Low switching losses • Short tail current • Positive temperature coefficient • Integrated gate resistor • Easy paralleling • Integrated current mirror (current sensor) • Integrated temperature sensor • Solderable / sinterable front side pads C G TSA TSC CS E Applications • Drives Description • Recommended for power modules Product Validation • Technology qualified for automotive applications. Ready for validation for automotive applications according to AEC Q100/101 or AQG324. Key Performance Parameters Chip Type IGC80T75E12RD2CKA VCE 750V ICn 150A Die Size 80.1mm2 Package Sawn on foil Datasheet www.infineon.
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