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IGC18T120T6L
IGBT4 Low Power Chip
FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling
This chip is used for: • low / medium power modules
Applications: • low / medium power drives
C G
E
Chip Type IGC18T120T6L
VCE ICn 1200V 15A
Die Size 4.16 x 4.34 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
4.16 x 4.34
2.652 x 2.246 1.185 x 0.702
mm 2
18.1 / 10.
IGC18T120T6L Datasheet
