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IGC136T170S8RH2 - IGBT

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG A

Features

  • 1700V Trench & Field stop technology.
  • low switching losses and saturation losses.
  • soft turn off.
  • positive temperature coefficient.
  • easy paralleling.
  • Qualified according to JEDEC for target.

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Full PDF Text Transcription

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IGC136T170S8RH2 IGBT3 Power Chip Features:  1700V Trench & Field stop technology  low switching losses and saturation losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  power modules Applications:  drives C G E Chip Type VCE ICn1 ) Die Size Package IGC136T170S8RH2 1700V 117.5A 17.72 x 7.7 mm2 sawn on foil 1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal 17.72 x 7.7 See chip drawing 1.674 x 0.899 136.
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