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IFX007T - High Current PN Half Bridge

Description

The IFX007T is an integrated high current half bridge for motor drive applications.

It is part of the Industrial & Multi Purpose NovalithIC™ family containing one p-channel high-side MOSFET and one n-channel low-side MOSFET with an integrated driver IC in one package.

Features

  • Path resistance of max. 12.8 mΩ @ 25°C (typ. 10.0 mΩ @ 25°C) High side: max. 6.5 mΩ @ 25°C (typ. 5.3 mΩ @ 25°C) Low side: max. 6.3 mΩ @ 25°C (typ. 4.7 mΩ @ 25°C).
  • Enhanced switching speed for reduced switching losses.
  • Capable for high PWM frequency combined with active freewheeling.
  • Switched mode current limitation for reduced power dissipation in overcurrent.
  • Current limitation level of 55 A min.
  • Status flag diagnosis with current sense ca.

📥 Download Datasheet

Datasheet Details

Part number IFX007T
Manufacturer Infineon
File Size 1.35 MB
Description High Current PN Half Bridge
Datasheet download datasheet IFX007T Datasheet

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Full PDF Text Transcription

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High Current PN Half Bridge with Integrated Driver IFX007T Industrial & Multi Purpose NovalithIC™ 1 Overview Quality Requirement Category: Industrial Features • Path resistance of max. 12.8 mΩ @ 25°C (typ. 10.0 mΩ @ 25°C) High side: max. 6.5 mΩ @ 25°C (typ. 5.3 mΩ @ 25°C) Low side: max. 6.3 mΩ @ 25°C (typ. 4.7 mΩ @ 25°C) • Enhanced switching speed for reduced switching losses • Capable for high PWM frequency combined with active freewheeling • Switched mode current limitation for reduced power dissipation in overcurrent • Current limitation level of 55 A min.
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