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IFS75B12N3E4_B31 - IGBT-Module

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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ™baseModulmitTrench/FeldstoppIGBT4,EmitterControlled4DiodeundStrommesswiderstand MIPAQ™basemodulewithtrench/fieldstopIGBT4,emittercontrolled4diodeandcurrentsenseshunt IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten/PreliminaryData HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES  1200 Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 95°C, Tvj = 175°C IC nom  75 PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM  150 Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj = 175°C Ptot  385 Gate-Emitter-Spitzenspannung G
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