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IDM10G120C5 - 1200V SiC Schottky Diode

Description

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2 Table of Contents3 Maximum ratings4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics diagram 5 Package Drawings 9 Revision History 10 Disclaimer….

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • No reverse recovery current / No forward recovery.
  • Temperature independent switching behavior.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Excellent thermal performance.
  • Extended surge current capability.
  • Specified dv/dt ruggedness.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription

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Diode Silicon Carbide Schottky Diode IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.
Published: |