Datasheet4U Logo Datasheet4U.com

IDL06G65C5 - Silicon Carbide Diode

Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

thin-wafer technology.

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Benchmark switching behavior.
  • No reverse rec.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IDL620 Optocoupler / Phototransistor Output / AC Input Vishay Siliconix

Other Datasheets by Infineon

Part Number Description
IDL02G65C5 Silicon Carbide Diode
IDL04G65C5 Silicon Carbide Diode
IDL08G65C5 Silicon Carbide Diode
IDL10G65C5 Silicon Carbide Diode
IDL12G65C5 Silicon Carbide Diode

Full PDF Text Transcription

Click to expand full text
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDL06G65C5 Final Datasheet Rev. 2.0, 2013-12-05 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode IDL06G65C5 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
Published: |