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IAUZ40N10S5L120
OptiMOS™-5 Power Transistor
Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested
Product Summary VDS RDS(on),max ID
100 V 12 mW 40 A
PG-TSDSON-8-33
Type IAUZ40N10S5L120
Package
Marking
PG-TSDSON-8-33 5N1L120
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Drain current Pulsed drain current2)
ID I D,pulse
V GS=10 V, Chip limitation1,2) V GS=10V, DC current3) T a=85 °C, V GS=10 V, RthJA on 2s2p 2,4)
T C=25 °C
Avalanche energy, single pulse2)
E AS
I D=20 A
Avalanche current, single pulse
I AS
-
Gate source voltage
V GS
-
Power dissipation
P tot
IAUZ40N10S5L120 Datasheet
