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HYS64D128021HBDL-6-B - 200-Pin Small Outline Dual-In-Line Memory Modules

Description

and charts stated herein.

Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings Due to technical requirements components may contain dangerous substances.

Features

  • mmended operation conditions. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability and exceeding only one of the values may cause irreversible damage to the integrated circuit. Table 7 Parameter Device Supply Voltage Device Supply Voltage Output Supply Voltage Electrical Characteristics and DC.

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Full PDF Text Transcription

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Data Sheet, Rev. 0.5, Dez. 2003 HYS64D128021[G/H]BDL–5–B HYS64D128021[G/H]BDL–6–B 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM Green Product Lead Containing Product Memory Products N e v e r s t o p t h i n k i n g . Edition 2003-12 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
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