H25R1202 - Reverse Conducting IGBT

Features

Powerful monolithic Body Diode with very low forward voltage.
Body diode clamps negative voltages.
Trench and Fieldstop technology for 1200 V.

H25R1202 reverse conducting igbt by Infineon - Datasheet Preview

Datasheet Details

Part number	H25R1202
Manufacturer	Infineon
File Size	400.40 KB
Description	Reverse Conducting IGBT
Datasheet	H25R1202 Datasheet

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Full PDF Text Transcription

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IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.

Published: Aug 30, 2010 |