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FZ1000R33HE3 - IGBT

Key Features

  • High DC stability.
  • High short-circuit capability.
  • Low switching losses.
  • Low VCEsat.
  • Unbeatable robustness.
  • Tvj op = 150°C.
  • VCEsat with positive temperature coefficient Mechanical Features.
  • AlSiC base plate for increased thermal cycling capability.
  • Package with CTI > 600.
  • IHM B housing.
  • Isolated base plate Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Mod.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FZ1000R33HE3 IHM-BModulmitschnellemTrench/FeldstoppIGBT3undEmitterControlled3Diode IHM-BmodulewithfastTrench/FieldstopIGBT3andEmitterControlled3diode VCES = 3300V IC nom = 1000A / ICRM = 2000A PotentielleAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme • Windgeneratoren ElektrischeEigenschaften • GroßeDC-Festigkeit • HoheKurzschlussrobustheit • NiedrigeSchaltverluste • NiedrigesVCEsat • SehrgroßeRobustheit • Tvjop=150°C • VCEsatmitpositivemTemperaturkoeffizienten MechanischeEigenschaften • AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit • GehäusemitCTI>600 • IHMBGehäuse • IsolierteBodenplatte PotentialApplications • Chopperapplications • Mediumvoltageconverters • M