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FS02MR12A8MA2B - Drive G2 module

General Description

T1 T3 T5 TS1 TS2 T2 T4 T6 TS3 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2024-04-19 FS02MR12A8MA2B HybridPACK™ Drive G2 module Table of contents Table of contents Description

Key Features

  • Electrical features - VDSS = 1200 V - IDN = 390 A - New semiconductor material - silicon carbide - Low RDS,on - Low switching losses - Low Qg and Crss - Low inductive design - Tvj,op = 175°C - Short-time extended operation temperature Tvj,op = 200 °C.
  • Mechanical features - 4.2 kV DC 1 second insulation - High creepage and clearance distances - Compact design - High power density - Direct-cooled PinFin base plate - High-performance Si3N4 ceramic - Guiding elements for PCB and c.

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Other Datasheets by Infineon

Part Number Description
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FS02MR12A8MA2B HybridPACK™ Drive G2 module Final datasheet HybridPACK™ Drive G2 module with SiC MOSFET Features • Electrical features - VDSS = 1200 V - IDN = 390 A - New semiconductor material - silicon carbide - Low RDS,on - Low switching losses - Low Qg and Crss - Low inductive design - Tvj,op = 175°C - Short-time extended operation temperature Tvj,op = 200 °C • Mechanical features - 4.