Datasheet4U Logo Datasheet4U.com

FD1000R33HE3-K - IGBT-modules

Key Features

  • High DC stability.
  • High short-circuit capability.
  • Low switching losses.
  • Low VCEsat.
  • Tvj op = 150°C.
  • VCEsat with positive temperature coefficient Mechanical Features.
  • AlSiC base plate for increased thermal cycling capability.
  • Package with CTI > 600.
  • IHM B housing.
  • Isolated base plate Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Module Material Number Production O.

📥 Download Datasheet

Full PDF Text Transcription for FD1000R33HE3-K (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FD1000R33HE3-K. For precise diagrams, and layout, please refer to the original PDF.

FD1000R33HE3-K IHM-BModulmitschnellemTrench/FeldstoppIGBT3undEmitterControlled3Diode IHM-BmodulewithfastTrench/FieldstopIGBT3andEmitterControlled3diod...

View more extracted text
modulewithfastTrench/FieldstopIGBT3andEmitterControlled3diode PotentielleAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme • Windgeneratoren ElektrischeEigenschaften • GroßeDC-Festigkeit • HoheKurzschlussrobustheit • NiedrigeSchaltverluste • NiedrigesVCEsat • Tvjop=150°C • VCEsatmitpositivemTemperaturkoeffizienten MechanischeEigenschaften • AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit • GehäusemitCTI>600 • IHMBGehäuse • IsolierteBodenplatte VCES = 3300V IC nom = 1000A / ICRM = 2000A PotentialApplications • Chopper

More Datasheets from Infineon

Part Number Description
FD1000R33HL3-K IGBT
FD1000R17IE4 IGBT
FD1000R17IE4D_B2 IGBT
FD1200R17HP4-K_B2 IGBT
FD1200R17KE3-K IGBT
FD1400R12IP4D IGBT
FD150R12RT4 IGBT