Datasheet4U Logo Datasheet4U.com

F3L100R07W2E3_B11 - IGBT-Module

Key Features

  • Increased blocking voltage capability to 650V.
  • Low inductive design.
  • Low Switching Losses.
  • Low VCEsat Mechanical Features.
  • Al2O3 Substrate with Low Thermal Resistance.
  • Compact design.
  • PressFIT Contact Technology.
  • Rugged mounting due to integrated mounting clamps Module Label Code Barcode Code 128 DMX - Code prepared by: DK approved by: MB Content of the Code Module Serial Number Module Material Number Production Order Num.

📥 Download Datasheet

Other Datasheets by Infineon

Part Number Description
F3L100R12W2H3_B11 IGBT
F3L150R07W2E3_B11 IGBT
F3L150R12W2H3_B11 IGBT
F3L15MR12W2M1_B69 IGBT
F3L15R12W2H3_B27 IGBT
F3L200R07PE4 IGBT
F3L200R07W2S5F_B11 EasyPACK module
F3L200R12N2H3_B47 IGBT
F3L200R12W2H3_B11 IGBT
F3L225R07W2H3P_B63 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F3L100R07W2E3_B11 EasyPACKModulmitTrench/FeldstoppIGBT3undEmitterControlled3DiodeundPressFIT/NTC EasyPACKmodulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandPressFIT/NTC VorläufigeDaten/PreliminaryData J TypischeAnwendungen • 3-Level-Applikationen • Motorantriebe • SolarAnwendungen • USV-Systeme ElektrischeEigenschaften • ErhöhteSperrspannungsfestigkeitauf650V • NiederinduktivesDesign • NiedrigeSchaltverluste • NiedrigesVCEsat MechanischeEigenschaften • Al2O3 Substrat mit kleinem thermischen Widerstand • KompaktesDesign • PressFITVerbindungstechnik • Robuste Montage durch integrierte Befestigungsklammern VCES = 650V IC nom = 100A / ICRM = 200A TypicalApplications