D2065C5
Description
Thin Q!™ Generation 5 represents Infineon leading edge technology for the Si C Schottky Barrier diodes. Thanks to the more pact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thin Q!™ Generation 5 has been designed to plement our 650V Cool MOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Features
- Revolutionary semiconductor material
- Silicon Carbide
- Benchmark switching behavior
- No reverse recovery/ No forward recovery
- Temperature independent switching behavior
- High surge current capability
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target applications
- Breakdown voltage tested at 44 m A2)
- Optimized for high temperature operation
Benefits
- System efficiency improvement over Si diodes
- System cost / size savings...
