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BSZ900N20NS3G - Power MOSFET

Features

  • Optimized for dc-dc conversion.
  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Low on-resistance R DS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSZ900N20NS3 G Product Summary VDS RDS(on),max ID 200 V 90 mW 15.2 A PG-TSDSON-8 Type BSZ900N20NS3 G Package Marking PG-TSDSON-8 900N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt ID I D,pulse E AS dv /dt T C=25 °C T C=100 °C T C=25 °C I D=7.
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