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BSZ440N10NS3 G
OptiMOS™3 Power-Transistor
Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID 100 44 18 PG-TSDSON-8 V mΩ A
Type BSZ440N10NS3 G
Package PG-TDSON-8
Marking 440N10N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche energy, single pulse Gate source voltage Power dissipation Op
BSZ440N10NS3G Datasheet
