Click to expand full text
OptiMOSTM3 Power-Transistor
Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, Logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21
BSZ150N10LS3 G
Product Summary VDS RDS(on),max ID
100 V 15 mW 40 A
PG-TSDSON-8
Type BSZ150N10LS3 G
Package
Marking
PG-TSDSON-8 150N10L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Value 40 30
Unit A
V GS=10 V, T A=25 °C, R thJA=60 K/W2)
8
Pulsed drain current3)
I D,pulse T C=25 °C
160
Avalanche energy, single pulse
BSZ150N10LS3G Datasheet
