The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BSZ120P03NS3E G
OptiMOSTM P3 Power-Transistor
Features • single P-Channel in S3O8 • Qualified according JEDEC 1) for target applications • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • ESD protected • applications: battery management, load switching • Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID -30 12 -40 V mΩ A
PG-TSDSON-8
Type BSZ120P03NS3E G
Package PG-TSDSON-8
Marking 120P3NE
Lead free Yes
Halogen free Yes
Packing non-dry
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C2) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation I D,pulse E AS V GS P to
BSZ120P03NS3EG Datasheet
