BSZ110N08NS5 - Metal Oxide Semiconductor Field Effect Transistor

Features

Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DC converters.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

Datasheet Details

Part number	BSZ110N08NS5
Manufacturer	Infineon
File Size	1.32 MB
Description	Metal Oxide Semiconductor Field Effect Transistor
Datasheet	BSZ110N08NS5 Datasheet
Additional preview pages of the BSZ110N08NS5 datasheet.

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V BSZ110N08NS5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V BSZ110N08NS5 1Description Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilitywithenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 11.

Published: Feb 18, 2015 |